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Renesas HSG2005 - page 1
Rev.4.00 Jun 21, 2006 page 1 of 12 HSG2005 SiGe HBT High Frequency Medium Power Amplifier REJ03G0485-0400 Rev.4.00 Jun 21, 2006 Features • High Transi tion Freque ncy f T = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at out put = +21 dBm typ. f = 5.8 G Hz • High Collector to Emitter Voltage V CEO = 5 V • Ideal for 2 GHz, 5 G ...
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Renesas HSG2005 - page 2
HSG2005 Rev.4.00 Jun 21, 2006 page 2 of 12 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions DC current transfer ratio h FE 150 220 300 V CE = 3 V, I C = 100 mA Reverse Transfer Capacitanc e C re 0.4 pF V CB = 3 V, I E = 0, f = 1 MHz, emitter grounded Transition Freq uenc y f T 28.5 GHz V CE = ...
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Renesas HSG2005 - page 3
HSG2005 Rev.4.00 Jun 21, 2006 page 3 of 12 V CE = 3 V MAG MSG 0 5 10 15 20 25 Collector Current I C (mA) Maximum Stable Gain MSG (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain, Maximum Available Gain vs. Collector Current 30 1 10 100 1000 20 0 0.1 1 10 Frequency f (GHz) 30 40 10 S 21 Parameter , Maximum Stable Gain, Maximum A vailable Gai ...
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Renesas HSG2005 - page 4
HSG2005 Rev.4.00 Jun 21, 2006 page 4 of 12 2.4 GHz Characteristics Input Power P in (dBm) 10 -10 -10 15 20 5 30 10 20 0 0 P in - P out Characteristics I op (mA) Evaluation Board Circuit Pin - Pout Characteristics -20 -20 0 20 -40 40 -40 0 40 -20 -60 Input Power P in (dBm) 3rd. Order Intermodulation Distortion (IMD3) -50 20 -30 -10 10 30 -10 -40 0 1 ...
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Renesas HSG2005 - page 5
HSG2005 Rev.4.00 Jun 21, 2006 page 5 of 12 5.8 GHz Characteristics Input Power P in (dBm) 10 0 5 15 20 5 25 15 20 10 P in - P out Characteristics I op (mA) OUT IN 0.5 pF *1 µ F *1 µ F 0.2 pF 1000 p F 27 Ω 2 pF 2 pF VCC VBB : Bias Control 1000 p F 0.4 pF 0.5 pF 10 p F 10 p F Evaluation Board Circuit Pin - Pout Characteristics 0 -10 -30 0 -20 10 ...
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Renesas HSG2005 - page 6
HSG2005 Rev.4.00 Jun 21, 2006 page 6 of 12 Condition: V CE = 3 V, I C = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: V CE = 3 V, I C = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 .8 ...
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Renesas HSG2005 - page 7
HSG2005 Rev.4.00 Jun 21, 2006 page 7 of 12 Condition: V CE = 3.3 V, I C = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: V CE = 3.3 V, I C = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 ...
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Renesas HSG2005 - page 8
HSG2005 Rev.4.00 Jun 21, 2006 page 8 of 12 Condition: V CE = 3.6 V, I C = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: V CE = 3.6 V, I C = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 ...
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Renesas HSG2005 - page 9
HSG2005 Rev.4.00 Jun 21, 2006 page 9 of 12 S parameter (V CE = 3 V, I C = 100 mA, Zo = 50 Ω ) S11 S21 S12 S22 f (MHz) MAG A NG (deg.) MAG A NG (deg.) MAG A NG (deg.) MAG A NG (deg.) 100 0.687 -139.8 77.53 120.52 0.0084 45.8 0.682 -105.5 200 0.775 -160.8 47.14 104.05 0.0106 28.1 0.598 -134.6 300 0.786 -169.2 32.99 96.02 0.0107 33.1 0.566 -148.2 40 ...
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Renesas HSG2005 - page 10
HSG2005 Rev.4.00 Jun 21, 2006 page 10 of 12 S parameter (V CE = 3.3 V, I C = 100 mA, Zo = 50 Ω ) S11 S21 S12 S22 f (MHz) MAG A NG (deg.) MAG A NG (deg.) MAG A NG (deg.) MAG A NG (deg.) 100 0.675 -140.9 80.79 120.97 0.0127 40.9 0.626 -109.1 200 0.771 -160.6 48.16 104.58 0.0091 37.0 0.594 -134.0 300 0.785 -168.9 33.50 96.32 0.0110 34.4 0.561 -147.6 ...
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Renesas HSG2005 - page 11
HSG2005 Rev.4.00 Jun 21, 2006 page 11 of 12 S parameter (V CE = 3.6 V, I C = 100 mA, Zo = 50 Ω ) S11 S21 S12 S22 f (MHz) MAG A NG (deg.) MAG A NG (deg.) MAG A NG (deg.) MAG A NG (deg.) 100 0.669 -141.0 82.98 121.53 0.0107 60.0 0.695 -107.8 200 0.763 -160.3 48.82 105.15 0.0118 37.6 0.583 -133.1 300 0.781 -168.8 33.85 96.65 0.0104 31.8 0.556 -146.8 ...
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Renesas HSG2005 - page 12
HSG2005 Rev.4.00 Jun 21, 2006 page 12 of 12 Package Dimensions 1.965 1.965 0 2.00 2.00 0.3 0.65 0.35 0.350 0.225 2.075 2.075 0.80 0.05 0.10 0.08 0.10 Reference Symbol Dimension in Millimeters Min Nom Max D E A A 1 A 2 b e L p x y y 1 Z D Z E 76 D A 1 A E 5 1 84 48 2 3 M xS A B S y 5 b 6 0.90 L p 0.05 0.60 7 32 Z D Z E C0.15 1 e A S B S y 1 P-HWQFN8 ...
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Renesas HSG2005 - page 13
Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safe ...
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