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Manual Cypress Semiconductor CY7C1316JV18

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  • Cypress Semiconductor CY7C1316JV18 - page 1

    18-Mbit DDR-II SRAM 2-W ord Burst Architecture CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-15271 Rev . *B Revised March 10, 2008 Features ■ 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 300 MHz clock fo ...

  • Cypress Semiconductor CY7C1316JV18 - page 2

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 2 of 26 Logic Block Diagram (CY7C1316JV18) Logic Block Diagram (CY7C1916JV18) Wri te Reg Wri te Reg CLK A (19:0) Gen. K K Control Logic Address Register Read Add. Decode Read Data Reg. R/W DQ [7:0] Output Logic Reg. Reg. Reg. 8 8 16 8 NWS [1:0] V REF Writ ...

  • Cypress Semiconductor CY7C1316JV18 - page 3

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 3 of 26 Logic Block Diagram (CY7C1318JV18) Logic Block Diagram (CY7C1320JV18) Wri te Reg Wri te Reg CLK A (19:0) Gen. K K Control Logic Address Register Read Add. Decode Read Data Reg. R/W DQ [17:0] Output Logic Reg. Reg. Reg. 18 18 36 18 BWS [1:0] V REF ...

  • Cypress Semiconductor CY7C1316JV18 - page 4

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 4 of 26 Pin Configuration The pin configuration for CY7C1316JV18, CY7C1318 JV18, and CY7C1320JV18 follow . [1] 165-Ball FBGA (13 x 15 x 1 .4 mm) Pinout CY7C1316JV18 (2M x 8) 123456789 1 0 1 1 A CQ NC/72M A R/W NWS 1 K NC/144M LD A NC/36M CQ B NC NC NC A N ...

  • Cypress Semiconductor CY7C1316JV18 - page 5

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 5 of 26 CY7C1318JV18 (1 M x 18) 123456789 1 0 1 1 A CQ NC/72M A R/W BWS 1 K NC/14 4M LD A NC/36M CQ B NC DQ9 NC A NC/288M K BWS 0 AN C N C D Q 8 C NC NC NC V SS AA 0A V SS NC DQ7 NC D NC NC DQ10 V SS V SS V SS V SS V SS NC NC NC E NC NC DQ1 1 V DDQ V SS V ...

  • Cypress Semiconductor CY7C1316JV18 - page 6

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 6 of 26 Pin Definitions Pin Name IO Pin Descripti on DQ [x:0] Input Output- Synchronous Data Input Output Signals . Sampled on the rising edge of K and K clocks during valid write operations. These pins drive out the requested d ata during a read operatio ...

  • Cypress Semiconductor CY7C1316JV18 - page 7

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 7 of 26 CQ Output Clock CQ is Referenced with Respect to C . This is a free running clock and is synchronized to the input cl ock for output data (C) of the DDR-II. In single clock mo de, CQ is generated with resp ect to K. The timing for the echo clocks ...

  • Cypress Semiconductor CY7C1316JV18 - page 8

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 8 of 26 Functional Overview The CY7C1316JV18, CY7C191 6JV18, CY7C1318JV18, and CY7C1320JV18 are synchronous pipelined Burst SRAMs equipped with a DDR interface, which operates with a read latency of one and half cycles when DOFF pin is tied HIGH. When DOF ...

  • Cypress Semiconductor CY7C1316JV18 - page 9

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 9 of 26 driver impedance. The value of RQ must be 5x the value of th e intended line impedance d riven by the SRAM. The allo wable range of RQ to guarantee impe dance matching with a to lerance of ±15% is between 175 Ω an d 350 Ω , with V DD Q =1 . 5 V ...

  • Cypress Semiconductor CY7C1316JV18 - page 10

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 10 of 26 T ruth T able The truth table for the CY7C1316JV18, CY7C1 916JV1 8, CY7C1318JV18, and CY7C1320JV18 follow s. [2, 3, 4, 5, 6, 7] Operation K LD R/W DQ DQ Write Cycle: Load address; wait one cycle; input write data on consecutive K and K rising edg ...

  • Cypress Semiconductor CY7C1316JV18 - page 11

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 1 1 of 26 Write Cycle Descriptions The write cycle description tabl e for CY7C1916JV18 follows. [2, 8] BWS 0 K K Comments L L–H – During the Data portion of a write sequence, the single byte (D [8:0] ) is written int o the de vi ce . L – L–H Du ri ...

  • Cypress Semiconductor CY7C1316JV18 - page 12

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 12 of 26 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan T est Access Port (T AP) in the FBGA p ackage. This part is fully comp liant with IEEE S tandard #1 149.1 -2001. The T AP operates using JEDEC standard 1.8V ...

  • Cypress Semiconductor CY7C1316JV18 - page 13

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 13 of 26 IDCODE The IDCODE instruction loads a vendor-specific, 32-bi t code into the instruction re gister . It a lso places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the device when the T AP controller enters the ...

  • Cypress Semiconductor CY7C1316JV18 - page 14

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 14 of 26 T AP Controller St ate Diag ram The state diagram for the T AP controller follows. [9] TEST -LOGIC RESET TEST -LOGIC / IDLE SELECT DR-SCAN CAPTURE-DR SHIFT -DR EXIT1-DR P AUSE-DR EXIT2-DR UPDA TE-DR 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1 ...

  • Cypress Semiconductor CY7C1316JV18 - page 15

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 15 of 26 T AP Controller Block Diagram T AP Electrical Characteristics Over the Operating Range [10, 1 1, 12] Parameter Description T est Conditions Min Max Unit V OH1 Output HIGH V oltage I OH = − 2.0 mA 1.4 V V OH2 Output HIGH V oltage I OH = − 100 ...

  • Cypress Semiconductor CY7C1316JV18 - page 16

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 16 of 26 T AP AC Switching Characteristics Over the Operating Range [13, 14] Parameter Description Min Max Unit t TCYC TCK Clock Cycle Time 50 ns t TF TCK Clock Frequency 20 MHz t TH TCK Clock HIGH 20 ns t TL TCK Clock LOW 20 ns Setup Times t TMSS TMS Set ...

  • Cypress Semiconductor CY7C1316JV18 - page 17

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 17 of 26 Identification R egi ster Definitions Instruction Field Va l u e Descriptio n CY7C1316JV18 CY7C1916JV18 CY7C1 318JV18 CY7C1320JV18 Revision Numb er (31:29) 001 001 001 001 V ersion number . Cypress Device ID (28:12) 1 10 10100010000101 1 10101000 ...

  • Cypress Semiconductor CY7C1316JV18 - page 18

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 18 of 26 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 2J 1 6 P2 9 9 G 5 7 5 B8 5 3 K 2 6N 30 1 1F 58 5A 86 3J 3 7P 31 1 1G 59 4A 87 2K 4 7 N3 2 9 F 6 0 5 C8 8 1 K 5 7R 33 10F 61 4B 89 2L 6 8R 34 1 1E 62 ...

  • Cypress Semiconductor CY7C1316JV18 - page 19

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 19 of 26 Power Up Sequence in DDR-II SRAM DDR-II SRAMs must be power ed up and initialized in a predefined manner to prevent unde fined operations. During power up, when th e DOFF is tied H IGH, the DLL is locked a fter 1024 cycles of st able clock. Power ...

  • Cypress Semiconductor CY7C1316JV18 - page 20

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 20 of 26 Maximum Ratings Exceeding maximum ratings may shorte n the battery life of the device. User guidelines are not te ste d. S torage T emperature ................ ................. –65°C to +150°C Ambient T empe r at ur e with Power Appl i ed. . ...

  • Cypress Semiconductor CY7C1316JV18 - page 21

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 21 of 26 Cap acit ance T ested initially and after any design or process change that may affect these parameters. Parameter Description T est Conditions Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 1.8V , V DDQ = 1.5V 5 pF C CLK Clock ...

  • Cypress Semiconductor CY7C1316JV18 - page 22

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 22 of 26 Switching Characteristics Over the Operating Range [19] Cypress Parameter Consor tium Parameter Description 300 MHz Unit Min Max t POWER V DD (T ypical) to the first Access [20] 1– m s t CYC t KHKH K Clock and C Clock Cycle Time 3.30 8.4 ns t K ...

  • Cypress Semiconductor CY7C1316JV18 - page 23

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 23 of 26 Switching W aveforms Figure 3. Read/Write/Deselect Sequence [2 4, 25, 26 ] READ READ READ NOP NOP WRITE WRITE NOP 1 23 4 56 7 8 9 1 0 Q40 t KHCH t CO t t HC t t HA t SD t HD t KHCH t SD t HD DON’ T CARE UNDEFINED t CLZ t DOH t CHZ SC t KH t KHK ...

  • Cypress Semiconductor CY7C1316JV18 - page 24

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 24 of 26 Ordering Information Not all of the speed, package and temperature ranges are ava ilable. Please contact your local sales representative or visit www .cypress.com for actual products offered. Spee d (MHz) Ordering Code Package Diagram Package T y ...

  • Cypress Semiconductor CY7C1316JV18 - page 25

    CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 25 of 26 Package Diagram Figure 4. 165-ball FBGA (13 x 15 x 1.40 mm), 51-85180 A 1 PIN 1 CORNER 15.00±0.10 13.00±0.10 7.00 1.00 Ø0.50 (165X) Ø 0 . 2 5MCAB Ø0.05 M C B A 0.15(4X) 0.35±0.06 SEATING PLANE 0.53±0.05 0.25 C 0.15 C PIN 1 CORNER TOP VIEW ...

  • Cypress Semiconductor CY7C1316JV18 - page 26

    Document Number: 001-15271 Rev . *B Revised March 10, 2008 Page 26 of 26 QDR RAMs an d Quad Data Rate RAMs comp rise a new family of product s develope d by Cypress, IDT , NEC, Renesas, and Samsung. All pr oduct and co mpany nam es mentioned i n this documen t are the tr ad emarks of their respe ctive hold ers. CY7C1316JV18, CY7C1916JV18 CY7C1318JV ...

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All of them are important, but the most important information from the point of view of use of the device are in the user manual Cypress Semiconductor CY7C1316JV18.

A group of documents referred to as user manuals is also divided into more specific types, such as: Installation manuals Cypress Semiconductor CY7C1316JV18, service manual, brief instructions and user manuals Cypress Semiconductor CY7C1316JV18. Depending on your needs, you should look for the document you need. In our website you can view the most popular manual of the product Cypress Semiconductor CY7C1316JV18.

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A complete Cypress Semiconductor manual, should contain several basic components. Some of them are less important, such as: cover / title page or copyright page. However, the remaining part should provide us with information that is important from the point of view of the user.

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