Manual Philips CGY2014TT

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  • Philips CGY2014TT - page 1

    DA T A SH EET Product specification Supersedes data of 2000 Apr 11 File under Integr ated Circuits, IC17 2000 Oct 16 INTEGRA TED CIRCUITS CGY2014TT GSM/DCS/PCS power amplifier ...

  • Philips CGY2014TT - page 2

    2000 Oct 16 2 Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT FEA TURES • Operating at 3.6 V battery supply • Power Amplifier (PA) output power: 35 dBm in GSM band and 32.5 dBm in DCS/PCS band • Input power: 0 dBm in GSM band and 3 dBm in DCS/PCS band • Wide operating temperature range from − 20 to +85 ...

  • Philips CGY2014TT - page 3

    2000 Oct 16 3 Philips Semiconductors Product specification GSM/DCS/PCS pow er amplifier CGY2014TT BLOCK DIA GRAM handbook, full pagewidth CGY2014TT 9 GND RFO/V DD3LB n.c. RFO/V DD3HB RFI LB RFI HB 13, 14 FCA180 V DD1HB V DD1LB V DD2LB V DD2HB 7 GND1 LB 8 6 2 15 3 4, 5 17, 18 1, 10, 11, 12, 16, 19, 20 Fig.1 Block diagram. ...

  • Philips CGY2014TT - page 4

    2000 Oct 16 4 Philips Semiconductors Product specification GSM/DCS/PCS pow er amplifier CGY2014TT PINNING SYMBOL PIN DESCRIPTION n.c. 1 not connected RFI HB 2 DCS/PCS power amplifier input V DD1HB 3 DCS/PCS first stage supply voltage V DD2HB 4 DCS/PCS second stage supply voltage V DD2HB 5 DCS/PCS second stage supply voltage V DD2LB 6 GSM second ...

  • Philips CGY2014TT - page 5

    2000 Oct 16 5 Philips Semiconductors Product specification GSM/DCS/PCS pow er amplifier CGY2014TT LIMITING V ALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. The total power dissipation is measured under GSM pulse conditions in a good thermal environment; see “Application Note CTT0003” . THERMAL CHARA CTERISTIC ...

  • Philips CGY2014TT - page 6

    2000 Oct 16 6 Philips Semiconductors Product specification GSM/DCS/PCS pow er amplifier CGY2014TT A C CHARA CTERISTICS V DD = 3.5 V ; T amb =2 5 ° C; measured on the Philips demoboard (see Fig.8). Notes 1. The device is adjusted to provide nominal load power into a 50 Ω load. The device is switched off and a 6 : 1 load replaces the 50 Ω load ...

  • Philips CGY2014TT - page 7

    2000 Oct 16 7 Philips Semiconductors Product specification GSM/DCS/PCS pow er amplifier CGY2014TT P erformance c haracteristics in GSM band handbook, halfpage 800 850 P o (dBm) 900 1000 37 33 31 35 η (%) 60 40 20 0 950 f RF (MHz) FCA171 (3) (2) (1) (3) (2) (1) output power efficiency Fig.3 Output power and efficiency as a function of the frequen ...

  • Philips CGY2014TT - page 8

    2000 Oct 16 8 Philips Semiconductors Product specification GSM/DCS/PCS pow er amplifier CGY2014TT APPLICA TION INFORMA TION handbook, full pagewidth FCA174 1 2 3 4 5 6 7 8 9 10 11 12 20 19 18 17 16 15 14 13 CGY2014TT TRL2 TRL1 n.c. TRL3 10 nF 3.9 nH 3.3 nH 100 pF 1 pF V d23DCS V d1DCS V d1GSM RF in GSM RFI LB RF in DCS 100 pF 1 nF 4.7 pF 6 pF 4 p ...

  • Philips CGY2014TT - page 9

    2000 Oct 16 9 Philips Semiconductors Product specification GSM/DCS/PCS pow er amplifier CGY2014TT handbook, full pagewidth FCA175 CGY2014TT 3 pF 4.7 pF 9.1 pF 4 pF 1 pF 100 pF 100 pF 1 nF 6 pF 3.3 nH 4.7 pF 3.9 nH 10 nF 2.7 pF 100 pF 5.6 pF BA891 56 pF 3.3 k Ω 1 nF Fig.8 Part of layout of Philips demoboard. Dimensions: approximately 19 mm × 19 ...

  • Philips CGY2014TT - page 10

    2000 Oct 16 10 Philips Semiconductors Product specification GSM/DCS/PCS pow er amplifier CGY2014TT P A CKA GE OUTLINE UNIT A 1 A 2 A 3 b p cD (1) E (2) Z (1) D h eL L p y w v θ REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.15 0.05 0.95 0.80 0.30 0.19 0.20 0.09 6.6 6.4 4.3 4.1 E h H E 3.1 2.9 4.5 4.3 0.65 6.6 6.2 0 ...

  • Philips CGY2014TT - page 11

    2000 Oct 16 11 Philips Semiconductors Product specification GSM/DCS/PCS pow er amplifier CGY2014TT SOLDERING Introduction to soldering surface mount pac kages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document or ...

  • Philips CGY2014TT - page 12

    2000 Oct 16 12 Philips Semiconductors Product specification GSM/DCS/PCS pow er amplifier CGY2014TT Suitability of surface mount IC packa ges for wave and reflo w soldering methods Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of ...

  • Philips CGY2014TT - page 13

    2000 Oct 16 13 Philips Semiconductors Product specification GSM/DCS/PCS pow er amplifier CGY2014TT D A T A SHEET ST A TUS Note 1. Please consult the most recently issued data sheet before initiating or completing a design. D A T A SHEET ST A TUS PRODUCT ST A TUS DEFINITIONS (1) Objective specification Dev elopment This data sheet contains the de ...

  • Philips CGY2014TT - page 14

    2000 Oct 16 14 Philips Semiconductors Product specification GSM/DCS/PCS pow er amplifier CGY2014TT NOTES ...

  • Philips CGY2014TT - page 15

    2000 Oct 16 15 Philips Semiconductors Product specification GSM/DCS/PCS pow er amplifier CGY2014TT NOTES ...

  • Philips CGY2014TT - page 16

    © Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be ...

Manufacturer Philips Category Stereo Amplifier

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